View UD606G-S08-R_8342488.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

unisonic technologies co., ltd ud606 power mosfet www.unisonic.com.tw 1 of 11 copyright ? 2014 unisonic technologies co., ltd qw-r502-169.c dual enhancement mode (n-channel/p-channel) ? description the ud606 can provide excellent r ds(on) and low gate charge by using advanced trench technology mosfets. the ud606 may be used in h-bridge, inverters and other applications. ? features * n-channel: 40v/8a r ds(on) < 33m ? @ v gs =10v, i d =8a r ds(on) < 55m ? @ v gs = 4.5v, i d =6a * p-channel: -40v/-8a r ds(on) < 50m ? @ v gs = -10v, i d =-8a r ds(on) < 70m ? @ v gs = -4.5v, i d =-4a * super high dense cell design * reliable and rugged ? symbol (3) d1/d2 (5) g2 (2) g1 s1 (1) s2 (4) n-channel p-channel sop-8 to-252-5 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 ud606l-tn5-r ud606g-tn5-r to-252-5 s1 g1 d1/d2 s2 g2 - - - tape reel - UD606G-S08-R sop-8 s1 g1 s2 g2 d2 d2 d1 d1 tape reel
ud606 power mosfet unisonic technologies co., ltd 2 of 11 www.unisonic.com.tw qw-r502-169.c ? marking to-252-5 sop-8 u t c u d 6 0 6 g 2 34 1 5 6 7 8 date code lot code
ud606 power mosfet unisonic technologies co., ltd 3 of 11 www.unisonic.com.tw qw-r502-169.c ? absolute maximum ratings (t a = 25c, unless otherwise specified) n-channel: parameter symbol ratings unit drain-source voltage v dss 40 v gate-source voltage v gss 20 v continuous drain current (note3) t c =25c i d 8 a pulsed drain current (note3) t c =25c i dm 30 a power dissipation to-252-5 p d 2 w sop-8 1.25 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c p-channel: parameter symbol ratings unit drain-source voltage v dss -40 v gate-source voltage v gss 20 v continuous drain current (note3) t c =25c i d -8 a pulsed drain current (note3) t c =25c i dm -30 a power dissipation to-252-5 p d 2 w sop-8 1.25 w power dissipation p d 2.5 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient n-channel to-252-5 ja 50 60 c/w sop-8 70 100 c/w p-channel to-252-5 40 50 c/w sop-8 68 100 c/w
ud606 power mosfet unisonic technologies co., ltd 4 of 11 www.unisonic.com.tw qw-r502-169.c ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 40 v drain-source leakage current i dss v ds =32v, v gs =0v 1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250ua 1 2.3 3 v drain-source on-state resistance (note2) r ds(on) v gs =10v, i d =8a 33 m ? v gs =4.5v, i d =6a 55 m ? dynamic characteristics input capacitance c iss v gs =0v,v ds =20v, f=1mhz 580 pf output capacitance c oss 100 pf reverse transfer capacitance c rss 87 pf switching characteristics turn-on delay time (note2) t d ( on ) v ds =20v, v gs =10v, r g =3 ? i d =1a 30 ns turn-on rise time t r 30 ns turn-off delay time t d ( off ) 140 ns turn-off fall time t f 70 ns total gate charge (note2) q g v ds =20v, v gs =10v, i d =8a 85 nc gate-source charge q gs 9 nc gate-drain charge q gd 7 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =1a, v gs =0v 0.76 1 v diode continuous forward current i s 8 a reverse recovery time t rr i f =8a, di/dt=100a/ s 22.9 ns reverse recovery charge q rr 18.3 nc
ud606 power mosfet unisonic technologies co., ltd 5 of 11 www.unisonic.com.tw qw-r502-169.c ? electrical characteristics(cont.) p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -40 v drain-source leakage current i dss v ds =-32v, v gs =0v -1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250ua -1 -1.8 -3 v drain-source on-state resistance (note2) r ds(on) v gs =-10v, i d =-8a 35 50 m ? v gs =-4.5v, i d =-4a 55 70 m ? dynamic characteristics input capacitance c iss v gs =0v,v ds =-20v,f=1.0mhz 657 pf output capacitance c oss 143 pf reverse transfer capacitance c rss 63 pf switching characteristics turn-on delay time (note2) t d ( on ) v ds =-20v, v gs =-10v, r g =3 ? , r l =2.5 ? 8 ns turn-on rise time t r 12.2 ns turn-off delay time t d ( off ) 24 ns turn-off fall time t f 12.5 ns total gate charge (note2) q g v ds =-20v, v gs =-10v, i d =-8a 14.1 nc gate-source charge q gs 2.2 nc gate-drain charge q gd 4.1 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-1a, v gs =0v -0.75 -1 v diode continuous forward current i s -8 a reverse recovery time t rr i f =-8a, di/dt=100a/ s 23.2 ns reverse recovery charge q rr 18.2 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 0.5%. 3. surface mounted on 1in 2 pad area, t 10sec.
ud606 power mosfet unisonic technologies co., ltd 6 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics n-channel 25 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source drain voltage, v sd (v) 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 body-diode characteristics i d =8a 125 25 100 90 80 70 60 50 40 30 20 10 24 6 8 10 gate source voltage, v gs (v) on-resisitance vs. gate-source voltage
ud606 power mosfet unisonic technologies co., ltd 7 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics(cont.) p o w e r ( w ) drain current, i d (a)
ud606 power mosfet unisonic technologies co., ltd 8 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics(cont.) 10 1 0.1 0.01 100 10 1 0.1 0.01 0.001 0.0001 0.00001 pulse width (s) normalized maximum transient thermal impedance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =60 /w in descending order d=0.5,0.3,0.1,0.05,0.02,0.01,single pulse single pulse p d t on t
ud606 power mosfet unisonic technologies co., ltd 9 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics(cont.) p-channel : v ds =-5v 125 25 25 20 15 10 5 0 12345 0 drain current, -i d (a) gate-source voltage, -v gs (v) transient characteristics -4.5v v gs =-4v -3.5v -3v -10v -5v -6v 30 25 20 15 10 5 0 0123 45 on-resistance characteristics drain current, -i d (a) drain-source voltage, -v ds (v)
ud606 power mosfet unisonic technologies co., ltd 10 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics(cont.) t j(max) =175 t a =25 200 160 120 80 40 0 0 1 0.1 0.01 0.001 0.0001 pulse width (s) single pulse power rating junction-to- case 100.0 10.0 1.0 0.1 1 10 100 0.1 drain-source voltage, -v ds (v) maximum forward biased safe operating area 10 s 100 s 1ms dc r ds(on) limited t j(max) =175 t a =25
ud606 power mosfet unisonic technologies co., ltd 11 of 11 www.unisonic.com.tw qw-r502-169.c ? typical characteristics(cont.) v gs =-4.5v v gs =-10v 80 70 60 50 40 30 20 48 12 16 20 0 drain current, -i d (a) on-resistance, r ds(on) (m ) on-resistance vs. drain current and gate voltage utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

▲Up To Search▲

Price & Availability of UD606G-S08-R

	To Download UD606G-S08-R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .